Electroless plating bath composition and method of use
AssigneeMicron Technology, Inc.
InventorsRita J. Klein, Adam J. Regner, III
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Abstract
An electroless plating composition comprising succinic acid, potassium carbonate, a source of cobalt metal ions, a reducing agent, and water is provided. An optional buffering agent may also be included in the composition. The composition may be used to deposit cobalt metal in or on semiconductor substrate surfaces including vias, trenches, and interconnects.
Claims19
A process of forming a cobalt metal layer on a semiconductor device comprising exposing a semiconductor device substrate to an electroless plating composition comprising succinic acid, potassium carbonate, a source of cobalt metal ions, a reducing agent, and water, for a time sufficient to deposit said cobalt metal layer.
A process of forming a cobalt metal layer on a semiconductor device comprising exposing a semiconductor device substrate to an electroless plating composition comprising an aqueous solution containing from about 4.0 to about 25.0 gm/l succinic acid, from about 4.0 to about 20.0 gm/l potassium carbonate, from about 7.0 to about 30.0 gm/l cobalt sulfate, from about 4.0 to about 25.0 gm/l ammonium sulfate, and from about 0.5 to about 5.0 gm/l dimethylamine borane, for a time sufficient to deposit said cobalt metal layer.
A process of forming a cobalt metal layer on a semiconductor device comprising exposing a semiconductor device substrate to an electroless plating composition comprising from about 0.4 to about 2.5% succinic acid, from about 0.4 to about 2.0% potassium carbonate, from about 0.7 to about 3.0% cobalt sulfate, from about 0.4 to about 2.5% ammonium sulfate, from about 0.05 to about 0.5% dimethylamine borane, and the balance water, all percentages by weight for a time sufficient to deposit said cobalt metal layer.
Dependencies are inferred from the claim text.