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US 2010/0144123 A1Published application
Methods of forming a compound semiconductor device including a diffusion region
AssigneeElectronics and Telecommunications Research Institute
InventorsMi-Ran PARK, Jae-Sik SIM, Yong-Hwan KWON, Bongki MHEEN, Dae Kon OH
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Abstract
Provided is a method of forming a compound semiconductor device. In the method, a dopant element layer is formed on an undoped compound semiconductor layer. An annealing process is performed to diffuse dopants in the dopant element layer into the undoped compound semiconductor layer, thereby forming a dopant diffusion region. A rapid cooling process is performed using liquid nitrogen with respect to the substrate having the dopant diffusion region.
Claims16
A method of forming a compound semiconductor device, the method comprising:
- forming an undoped compound semiconductor layer on a substrate;
- forming a dopant element layer on the undoped compound semiconductor layer;
- performing an annealing process to diffuse dopants in the dopant element layer into the undoped compound semiconductor layer, thereby forming a dopant diffusion region;
- and
- performing a rapid cooling process using liquid nitrogen to the substrate having the dopant diffusion region.
2 more elements
Dependencies are inferred from the claim text.