Method for Stacking Semiconductor Dies
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsKu-Feng Yang, Weng-Jin Wu, Wen-Chih Chiou, Chen-Hua Yu
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Abstract
A system and method for stacking semiconductor dies is disclosed. A preferred embodiment comprises forming through-silicon vias through the wafer, protecting a rim edge of the wafer, and then removing the unprotected portions so that the rim edge has a greater thickness than the thinned wafer. This thickness helps the fragile wafer survive further transport and process steps. The rim edge is then preferably removed during singulation of the individual dies from the wafer.
Claims20
A method for forming a semiconductor device, the method comprising:
- providing a wafer with a first side, a second side opposite the first side, the wafer comprising at least one conductive plug passing through at least a portion of the wafer;
- protecting an edge of the wafer on the second side;
- thinning the second side of the wafer to expose the at least one conductive plug without thinning the edge of the second side, thereby forming a thinned portion and an unthinned edge;
- and
- separating the thinned portion of the wafer from the unthinned edge.
A method for forming a semiconductor device, the method comprising:
- providing a wafer comprising a first side and a second side opposite the first side, the second side of the wafer comprising a first portion and a second portion surrounding the first portion;
- forming at least one conductive plug in the first portion of the wafer;
- protecting the second portion of the wafer;
- thinning the first portion of the wafer to expose the at least one conductive plug without thinning the second portion of the wafer, the thinning forming a thinned first portion of the wafer and an unthinned second portion of the wafer;
- and
- separating the thinned first portion of the wafer from the unthinned second portion of the wafer.
A method for forming semiconductor devices:
- providing a semiconductor wafer having an inner die area surrounded by a scribe line and an outer area immediately adjacent to the scribe line, the semiconductor wafer comprising a first side and a second side;
- forming conductive vias partially through the semiconductor wafer from the first side;
- and
- thinning the inner die area on the second side of the wafer to expose the conductive vias without thinning the outer area.
Dependencies are inferred from the claim text.