Sulfonium salt, acid generator, resist composition, photomask blank, and patterning process
AssigneeShin-Etsu Chemical Co., Ltd.
InventorsMasaki OHASHI, Takeshi KINSHO, Satoshi WATANABE, Youichi OHSAWA
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AssigneeShin-Etsu Chemical Co., Ltd.
InventorsMasaki OHASHI, Takeshi KINSHO, Satoshi WATANABE, Youichi OHSAWA
Estimating the term…
A sulfonium salt has formula (1) wherein R1 is a monovalent hydrocarbon group except vinyl and isopropenyl, R2, R3, and R4 are alkyl, alkenyl, oxoalkyl, aryl, aralkyl or aryloxoalkyl or may bond together to form a ring with the sulfur atom, and n is 1 to 3. A chemically amplified resist composition comprising the sulfonium salt is capable of forming a fine feature pattern of good profile after development due to high resolution, improved focal latitude, and minimized line width variation and profile degradation upon prolonged PED.
A sulfonium salt having the general formula (1):
A sulfonium salt having the general formula (2):
A chemically amplified resist composition comprising an acid generator capable of generating a sulfonic acid in response to high-energy radiation or heat, said sulfonic acid having the general formula (1a):
A chemically amplified resist composition comprising an acid generator capable of generating a sulfonic acid in response to high-energy radiation or heat, said sulfonic acid having the general formula (2a):
Dependencies are inferred from the claim text.