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US 2010/0143198 A1Published application
Sample support structure and methods
AssigneeProtochips, Inc.
InventorsJohn Damiano, JR., Stephen E. Mick, David P. Nackashi
Life of this patent
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Abstract
A sample support structure comprising a sample support manufactured from a semiconductor material and having one or more openings therein. Methods of making and using the sample support structure.
Claims35
A sample support structure comprising a sample support manufactured from a first material and having one or more holes therein.
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A method of making a sample support structure, comprising the steps of:
- (a) providing a substrate comprising three layers:
- (i) a top base layer comprising an etchable base material;
- (ii) a middle insulator layer comprising an etchable insulator material;
- and
- (iii) a bottom substrate layer comprising an etchable substrate material;
- (b) applying a sample support layer to the top base layer wherein the sample support layer comprises an etchable sample support material;
- (c) patterning dimensions of a sample support onto the sample support layer, wherein the dimensions include one or more holes;
- (d) etching the sample support layer to achieve dimensions established by the patterning step, including the one or more holes;
- (e) etching the base layer to achieve dimensions of a base;
- (f) etching the insulator layer to release or substantially release the insulator layer, thereby freeing or substantially freeing a sample support structure comprising:
- (i) a sample support comprising one or more holes therein;
- and
- (ii) a base underlying the sample support comprising an opening therein substantially surrounding the one or more holes of the sample support.
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Dependencies are inferred from the claim text.