Negative word line voltage generator for semiconductor memory device

A negative word line voltage generator for a semiconductor memory device, comprising:

• a comparison unit configured to compare a reference voltage and a feedback voltage and to output a comparison result as an output signal;
• a pull-down driving unit configured to pull down a voltage level of a negative word line voltage node in response to an output signal of the comparison unit;
• and
• a feedback unit configured to supply the feedback voltage corresponding to a voltage level of the negative word line voltage node,
• wherein the comparison unit includes a first bias unit configured to supply a first sourcing current, and a second bias unit configured to supply a second sourcing current during an activation period of a precharge signal.