Non-Volatile Memory Device and Program Method Thereof

A program method of a non-volatile memory device, comprising:

• classifying plural memory cells into aggressor cells and victim cells based on program data to be written in the plural memory;
• programming the victim cells;
• and
• programming the aggressor cells,
• wherein a verification voltage for programming the victim cells is identical to or lower than a verification voltage corresponding to a target state of each victim cell.

A program method of a non-volatile memory device, comprising:

• classifying plural memory cells into aggressor cells and victim cells based on program data to be written in the plural memory;
• programming the aggressor cells to a dummy state;
• and
• programming the aggressor cells and the victim cells to target states, respectively,
• wherein the dummy state corresponds to a threshold voltage lower than a target state of the aggressor cells.

A non-volatile memory device comprising:

• a cell array including plural memory cells;
• a page buffer connected with a bit line of each of the plural memory cells;
• a voltage generator configured to supply a word line voltage to a word line of the plural memory cells;
• and
• control logic configured to control the page buffer and the voltage generator such that the plural memory cells are classified into aggressor cells and victim cells based on program data to be written in the plural memory cells and physical influence mutually inflicted between the plural memory cells and such that the aggressor cells are programmed according to a program operation different from the victim cells.