Lithographic apparatus and device manufacturing method with double exposure overlay control

A lithographic apparatus configured to project a pattern from a patterning device onto a substrate, wherein the lithographic apparatus is further configured to:

• align a first mask that comprises a first pattern and a local mark pattern by using a main mark of a base layer of the substrate located under a pattern receiving layer of the substrate;
• project, in a first exposure, the first pattern and the local mark pattern on a resist layer over the main mark and the pattern receiving layer;
• align a second mask that comprises a second pattern relative to the pattern receiving layer by using the local mark pattern transferred into the pattern receiving layer;
• and
• project, in a second exposure, the second pattern on a further resist layer on top of the pattern receiving layer, the first and second patterns being configured to form an assembled pattern.

A lithographic system to transfer a pattern from a patterning device onto a substrate, wherein the lithographic system is further configured to:

• align a first mask that comprises a first pattern and a local mark pattern by using a main mark of the substrate underneath a resist layer on the substrate, the resist layer overlying a pattern receiving layer of the substrate;
• project, in a first exposure, the first pattern and the local mark pattern on the resist layer;
• align a second mask that comprises a second pattern relative to the pattern receiving layer by using the local mark pattern transferred to the pattern receiving layer;
• and
• project, in a second exposure, the second pattern on a further resist layer on top of the pattern receiving layer, the first and second patterns being configured to form an assembled pattern.

A lithographic apparatus configured to project a pattern from a patterning device onto a substrate, wherein the lithographic apparatus is further configured to:

• align a first pattern and a local mark pattern of a patterning device by using a main mark of the substrate located under a resist layer on the substrate;
• project, in a first exposure, the first pattern and the local mark pattern on the resist layer;
• align a second pattern of a patterning device relative to a pattern receiving layer of the substrate by using the local mark pattern transferred into the pattern receiving layer;
• and
• project, in a second exposure, the second pattern on a further resist layer on top of the pattern receiving layer, the first and second patterns being configured to form an assembled pattern.