Solid-state imaging device, method for producing same, and camera

A method for producing a solid-state imaging device including a substrate having a first surface and a second surface, a wiring layer being disposed on the first surface side, and light being incident on the second surface side, the method comprising the steps of;

• forming a photodetector including a first region of a first conductivity type in the substrate:
• forming a transfer gate at an area on the first surface of the substrate and adjacent to the photodetector;
• and
• forming a control gate at an area on the first surface of the substrate and superposed on the photodetector.

A camera comprising:

• a solid-state imaging device including
• a substrate having a first surface and a second surface, light being incident on the second surface side;
• and
• a wiring layer disposed on the first surface side;
• an optical system that guides incident light to the second surface side;
• and
• a signal-processing circuit that processes an output signal of the solid-state imaging device;
• wherein the solid-state imaging device further includes
• a photodetector disposed in the substrate and including a first region of a first conductivity type,
• a transfer gate disposed on the first surface of the substrate and adjacent to the photodetector, the transfer gate transferring a signal charge accumulated in the photodetector;
• and
• a control gate disposed on the first surface of the substrate and superposed on the photodetector, the control gate controlling the potential of the photodetector in the vicinity of the first surface.

A solid-state imaging device comprising:

• a transparent conductive film disposed above a light-receiving surface of a photodetector;
• and
• a stacked film disposed between the light-receiving surface and the transparent conductive film, the stacked film including at least two types of sub-film,
• wherein the sub-film that is in contact with the light-receiving surface is a silicon oxide sub-film having a thickness of 50 nm or less.

A camera comprising:

• an optical system that guides incident light to a photodetector of a solid-state imaging device;
• and
• a signal-processing circuit that processes an output signal of the solid-state imaging device;
• wherein the solid-state imaging device includes
• a transparent conductive film disposed above a light-receiving surface of the photodetector, and
• an insulating film disposed between the light-receiving surface and the transparent conductive film, the insulating film having a thickness of 50 nm or less.

A camera comprising:

• an optical system that guides incident light to a photodetector of a solid-state imaging device;
• and
• a signal-processing circuit that processes an output signal of the solid-state imaging device;
• wherein the solid-state imaging device includes
• a transparent conductive film disposed above a light-receiving surface of the photodetector, and
• a stacked film disposed between the light-receiving surface and the transparent conductive film, the stacked film including at least two types of sub-film,
• wherein the sub-film that is in contact with the light-receiving surface is a silicon oxide sub-film having a thickness of 50 nm or less.