Semiconductor device and method of forming an interconnect structure for 3-d devices using encapsulant for structural support

A method of making a semiconductor device, comprising:

• providing a substrate;
• forming a first interconnect structure over a first side of the substrate by,
• (a) forming a first conductive layer over the first side of the substrate,
• (b) forming a first insulating layer over the first conductive layer and substrate,
• (c) removing a portion of the first insulating layer to expose the first conductive layer,
• (d) forming a second conductive layer over the first conductive layer,
• (e) forming a second insulating layer over the second conductive layer and first insulating layer, and
• (f) removing a portion of the second insulating layer to expose the second conductive layer;
• mounting a semiconductor die or component to the first interconnect structure;
• depositing an encapsulant over the semiconductor die or component and first interconnect structure;
• removing a portion of a second side of the substrate, opposite the first side of the substrate, to reduce its thickness;
• forming a through silicon via (TSV) through the second side of the substrate to the first interconnect structure;
• and
• forming a second interconnect structure over the TSV.

A method of making a semiconductor device, comprising:

• providing a substrate;
• forming a first interconnect structure over a first side of the substrate;
• mounting a semiconductor die or component to the first interconnect structure;
• depositing an encapsulant over the semiconductor die or component and first interconnect structure;
• removing a portion of a second side of the substrate, opposite the first side of the substrate, to reduce its thickness;
• forming a through silicon via (TSV) through the second side of the substrate to the first interconnect structure by,
• (a) forming a first insulating layer over the second side of the substrate, and
• (b) removing a portion of the first insulating layer over the first interconnect structure;
• and
• forming a second interconnect structure over the TSV.

A method of making a semiconductor device, comprising:

• providing a substrate;
• forming a first interconnect structure over the substrate by,
• (a) forming a first conductive layer over the substrate,
• (b) forming a first insulating layer over the first conductive layer and substrate,
• (c) removing a portion of the first insulating layer to expose the first conductive layer,
• (d) forming a second conductive layer over the first conductive layer,
• (e) forming a second insulating layer over the second conductive layer and first insulating layer, and
• (f) removing a portion of the second insulating layer to expose the second conductive layer;
• mounting a semiconductor die or component to the first interconnect structure;
• depositing an encapsulant over the semiconductor die or component and first interconnect structure;
• removing at least a portion of the substrate to expose the first interconnect structure;
• and
• forming a second interconnect structure over the first interconnect structure.

A method of making a semiconductor device, comprising:

• providing a substrate;
• forming a first interconnect structure over the substrate;
• mounting a semiconductor die or component to the first interconnect structure;
• depositing an encapsulant over the semiconductor die or component and first interconnect structure;
• removing at least a portion of the substrate to expose the first interconnect structure;
• and
• forming a second interconnect structure over the first interconnect structure by,
• (a) forming a first insulating layer over the first interconnect structure,
• (b) removing a portion of the first insulating layer, and
• (c) forming a first conductive layer over the first insulating layer in the removed portion of the first insulating layer.

A method of making a semiconductor device, comprising:

• providing a substrate;
• forming a first interconnect structure over a first side of the substrate;
• mounting a semiconductor die or component to the first interconnect structure;
• depositing an encapsulant over the semiconductor die or component and first interconnect structure;
• removing a portion of a second side of the substrate, opposite the first side of the substrate;
• and
• forming a conductive through silicon via (TSV) through the substrate and electrically connecting the conductive TSV to the first interconnect structure by,
• (a) forming a first insulating layer over the second side of the substrate, and
• (b) removing a portion of the first insulating layer over the first interconnect structure.