Semiconductor device and method for manufacturing the same
OwnerOh Jin Junginventor
Life of this patent
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Abstract
Provided are a semiconductor device and a method for manufacturing the same. The semiconductor device comprises a circuit layer, a metal interconnection layer, and a deep via. The circuit layer is formed on a semiconductor substrate. The metal interconnection layer is formed on the circuit layer. The metal interconnection layer comprises a metal interconnection connected to the circuit layer. The deep via penetrates through the semiconductor substrate and the metal interconnection layer. The deep via comprises a laser-annealed crystalline silicon.
Claims18
A semiconductor device comprising:
- a circuit layer on a semiconductor substrate;
- a metal interconnection layer on the circuit layer, the metal interconnection layer comprising a metal interconnection connected to the circuit layer;
- and
- a deep via through the semiconductor substrate and the metal interconnection layer, the deep via comprising a laser-annealed crystalline silicon.
A system-in-package comprising:
- a first semiconductor chip comprising:
- a circuit layer on a silicon substrate,
- a metal interconnection layer on the circuit layer, the metal interconnection layer comprising a metal interconnection connected to the circuit layer,
- a deep via through the silicon substrate and the metal interconnection layer, the deep via comprising a laser-annealed crystalline silicon, and
- a pad on the metal interconnection layer, the pad being electrically connected to the deep via;
- a first conductive bump contacting one end of the first semiconductor chip;
- and
- a second semiconductor chip connected to the first conductive bump.
A method for manufacturing a semiconductor device, comprising:
- forming a circuit layer on a semiconductor substrate;
- forming a metal interconnection layer on the circuit layer, the metal interconnection layer comprising a metal interconnection connected to the circuit layer;
- forming a deep via hole penetrating a portion of the semiconductor substrate and the metal interconnection layer;
- gap-filling a silicon nanowire in the deep via hole;
- and
- forming a deep via comprising a crystallized silicon by laser-annealing the silicon nanowire in the deep via hole.
Dependencies are inferred from the claim text.