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US 2010/0140749 A1Published application
Semiconductor device
AssigneeUnited Microelectronics Corp.
InventorChien-Li Kuo
Life of this patent
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Abstract
A semiconductor device with a TSV and a shelter is provided. The semiconductor device includes a substrate, a circuit area, at least a TSV and a shelter. The circuit area and the TSV are disposed on the substrate, and the TSV penetrates through the substrate. The shelter is disposed on the substrate and at least one part thereof is between the circuit area and the TSV in order to shelter EMI between the TSV and the circuit area. The novel structure prevents the circuits in the circuit area being affected by noise caused by TSV when TSV acts as a power pin.
Claims20
A semiconductor device comprises:
- a substrate;
- a circuit area;
- at least a TSV that penetrates through the substrate;
- and
- a first shelter disposed on the substrate and at least a part of the first shelter is between the TSV and the circuit area.
2 more elements
Dependencies are inferred from the claim text.