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US 2010/0140739 A1Published application
Semiconductor Device and Fabricating Method Thereof
AssigneeDongbu HiTek Co., Ltd.
InventorNam Joo KIM
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Abstract
Disclosed is a semiconductor device which includes a substrate having an air layer or void therein, an interlayer dielectric film above the substrate, and a metal wiring having a spiral structure on the interlayer dielectric film corresponding to or over the air layer. The semiconductor device exhibits reduced parasitic capacitance between the metal wiring (used as an inductor) and the substrate, thereby improving a self-resonance frequency as well as an applicable frequency band of the inductor.
Claims19
A semiconductor device, comprising:
- a substrate having an air layer or void therein;
- a dielectric film on or above the substrate;
- and
- a metal wiring on the dielectric film, corresponding to or over the air layer or void.
1 more element
A method for fabricating a semiconductor device, comprising:
- forming an ion implantation region in a substrate;
- heating the substrate to change the ion implantation region into a sacrificial layer;
- forming a plurality of trenches in the substrate to expose the sacrificial layer;
- removing the sacrificial layer through or exposed by the trenches to generate a space or void inside the substrate;
- oxidizing the substrate to form an oxide film along an inner wall of the internal space;
- and
- forming a metal wiring on an uppermost surface of the substrate having the oxide film thereon.
4 more elements
Dependencies are inferred from the claim text.