Semiconductor Device and Method for Forming Passive Circuit Elements With Through Silicon Vias to Backside Interconnect Structures

A semiconductor device, comprising:

• a substrate;
• a first conductive layer formed over a first surface of the substrate;
• a conductive via formed through the substrate and electrically common with the first conductive layer;
• a first insulating layer formed over the first conductive layer;
• a second insulating layer formed over the substrate and first conductive layer;
• a second conductive layer formed over the first and second insulating layers and first conductive layer;
• and
• an under bump metallization (UBM) formed over a second surface of the substrate and electrically connected to the conductive via.

A semiconductor device, comprising:

• a substrate having first and second surfaces;
• a first conductive layer formed over the first surface of the substrate;
• an interconnect structure formed between the first surface and second surface of the substrate and electrically common with the first conductive layer;
• a first insulating layer formed over the first conductive layer;
• a second insulating layer formed over the substrate and first conductive layer;
• a second conductive layer formed over the first and second insulating layers and first conductive layer;
• and
• a third conductive layer formed over the second surface of the substrate and electrically connected to the interconnect structure.

A semiconductor device, comprising:

• a substrate;
• an interconnect structure formed between a first surface and second surface of the substrate;
• an integrated passive device (IPD) formed over the substrate and electrically connected to the interconnect structure;
• and
• an under bump metallization (UBM) formed over the second surface of the substrate and electrically connected to the interconnect structure.