Semiconductor devices and systems
AssigneeGeneral Electric Company
InventorsStanislav Ivanovich Soloviev, Ho-Young Cha, Peter Micah Sandvik, Alexey Vert, Jody Alan Fronheiser
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Abstract
A semiconductor device is disclosed. The semiconductor device comprises, a first region of a first conductivity type, a second region of a second conductivity type disposed adjacent to the first region to form a p-n junction structure, a resistance modification region of the second conductivity type, and a field response modification region of the second conductivity type disposed between the resistance modification region and the second region, wherein the field response modification region comprises a varying dopant concentration distribution along a thickness direction of the field response modification region.
Claims30
A semiconductor device comprising:
- a first region (402) of a first conductivity type;
- a second region (404) of a second conductivity type disposed adjacent to the first region to form a p-n junction structure;
- a resistance modification region (406) of the second conductivity type;
- and
- a field response modification region (408) of the second conductivity type disposed so as to be between and in contact with the resistance modification region and the second region, wherein the field response modification region comprises a varying dopant concentration distribution region along a thickness direction of the field response modification region.
An electronic system comprising:
- a semiconductor device;
- and
- an arrangement for reverse biasing the semiconductor device;
- wherein, the semiconductor device comprises:
- a first region of a first conductivity type;
- a second region of a second conductivity type disposed adjacent to the first region to form a p-n junction structure;
- a resistance modification region of the second conductivity type;
- and
- a field response modification region of the second conductivity type disposed between the resistance modification region and the second region, wherein the field response modification region comprises a varying dopant concentration distribution along a thickness direction of the field response modification region.
A semiconductor device comprising:
- a first region (702) of a first conductivity type;
- second region (704) of a second conductivity type disposed adjacent to the first region to form a p-n junction structure;
- a resistance modification region (706) of the second conductivity type;
- and
- an implanted resistive region (708) disposed so as to be in contact with the resistance modification region and the second region, wherein an electrical resistance of the implanted resistive region is substantially greater than a resistance of the resistance modification region and substantially greater than a resistance of the second region.
Dependencies are inferred from the claim text.