Method and system for providing magnetic elements having enhanced magnetic anisotropy and memories using such magnetic elements

A magnetic element comprising:

• a pinned layer, the pinned layer being magnetic and having a pinned layer magnetization;
• a spacer layer, the spacer layer being nonmagnetic;
• a free layer having a free layer magnetization and at least one free layer easy axis, and at least one hard axis, the spacer layer residing between the pinned layer and the free layer;
• a stability structure including a separation layer, a plurality of magnetic layers and at least one nonmagnetic spacer layer, the separation layer being nonmagnetic and residing between the plurality of magnetic layers and the free layer, the plurality of magnetic layers being interleaved with the at least one nonmagnetic layer, each of the plurality of magnetic layers having an easy axis and a magnetization antiferromagnetically coupled with the magnetization of a next magnetic layer of the plurality of magnetic layers, the easy axis being substantially perpendicular to the at least one free layer easy axis,
• wherein the magnetic element is configured to allow the free layer magnetization to be switched to each of a plurality of states when a write current is passed through the magnetic element.

A magnetic memory comprising:

• a plurality of magnetic storage cells, each of the plurality of magnetic storage cells including at least one magnetic element, each of the at least one magnetic element including a pinned layer, a free layer, a nonmagnetic spacer layer between the pinned layer and the spacer layer, and a stability structure, the free layer being between the spacer layer and the stability structure, the spacer layer being nonmagnetic, the free layer having a free layer magnetization and at least one free layer easy axis, and at least one hard axis, the spacer layer residing between the pinned layer and the free layer, the stability structure including a plurality of magnetic layers, the stability structure being configured to decrease a first magnetic energy of a first configuration corresponding to the free layer magnetization being aligned with the at least one easy axis substantially without decreasing a second magnetic energy of a second configuration corresponding to the free layer magnetization being aligned with the at least one hard axis, the magnetic element is configured to allow the free layer magnetization to be switched to each of a plurality of states when a write current is passed through the magnetic element
• a plurality of word lines coupled with the plurality of magnetic storage cells;
• and
• a plurality of bit lines coupled with the plurality of storage cells.

A method for fabricating magnetic element comprising:

• providing a pinned layer, the pinned layer being magnetic and having a pinned layer magnetization;
• providing a spacer layer, the spacer layer being nonmagnetic;
• providing a free layer having a free layer magnetization and at least one free layer easy axis, and at least one hard axis, the spacer layer residing between the pinned layer and the free layer;
• and
• providing a stability structure including a plurality of magnetic layers, the free layer residing between the spacer layer and the stability structure, the stability structure being configured to decrease a first magnetic energy of a first configuration corresponding to the free layer magnetization being aligned with the at least one easy axis without decreasing a second magnetic energy of a second configuration corresponding to the free layer magnetization being aligned with the at least one hard axis;
• wherein the magnetic element is configured to allow the free layer magnetization to be switched to each of a plurality of states when a write current is passed through the magnetic element.