Embedded microelectromechanical systems (mems) semiconductor substrate and related method of forming

A method of forming an embedded MEMS semiconductor substrate used as a starting material for subsequent semiconductor device processing, comprising:

• forming a MEMS device in a semiconductor substrate and at least one MEMS electrode and which includes a buried silicon dioxide sacrificial layer;
• releasing the MEMS device by removing the buried sacrificial layer and applying a polysilicon seed layer and capping layer over the MEMS device and at least one MEMS electrode while also forming vias using photolithography and implanting deep contacts to the MEMS device and any MEMS electrodes and forming trench isolation of such deep contacts;
• and
• growing an epitaxial layer over the polysilicon seed layer to be used for subsequent semiconductor wafer processing.

An embedded MEMS semiconductor substrate, comprising:

• a semiconductor substrate having a MEMS device formed therein and including at least one MEMS electrode, wherein the MEMS device had been released therein;
• a semiconductor capping layer over the MEMS device;
• a seed layer applied over the semiconductor capping layer and the semiconductor substrate;
• and
• an epitaxial layer grown over the seed layer to be used for subsequent semiconductor wafer processing.