Trench-Based Power Semiconductor Devices With Increased Breakdown Voltage Characteristics

A semiconductor device comprising:

• a first plurality of parallel trenches extending in a semiconductor region, each trench having a shield electrode and a gate electrode vertically stacked therein, the shield and gate electrodes being electrically insulated from each other;
• a first pad adapted to receive a first external connection and electrically coupled to the shield electrodes of the first plurality of parallel trenches;
• a second pad adapted to receive a second external connection;
• an electrical trace electrically coupled to the second pad and to the gate electrode of at least one trench of the first plurality of parallel trenches;
• and
• a second plurality of parallel trenches extending in a semiconductor region and disposed under at least one of the second pad and the electrical trace, each trench of the second plurality having a first electrode disposed therein.