Semiconductor device and manufacturing method of semiconductor device
AssigneeDongbu HiTek Co., Ltd.
InventorChul-Jin Yoon
Life of this patent
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Abstract
A semiconductor device includes a semiconductor substrate in which a first trench is formed and a second trench is formed at the middle portions of the first trench; and a first ion implantation layer that is formed on the surface of the semiconductor substrate and on the bottom of the first trench, the portions formed on the bottom of the first trench being spaced from each other by the second trench. A gate is formed from the bottom of the both side walls of the first trench to the middle portions thereof; a drift region is formed at both side walls of the first trench over the second trench; and a second ion implantation layer formed on the inner surface of the second trench.
Claims20
A method, comprising:
- forming a first trench over a semiconductor substrate;
- forming a first ion implantation layer over a surface of the semiconductor substrate and over a bottom of the first trench;
- forming a second gate from substantially a respective bottom of each side wall of the first trench to a respective middle portion thereof, and forming a second trench penetrating through a portion of the first ion implantation layer over the bottom of the first trench;
- forming a respective drift region over each side wall of the first trench over the second trench;
- and
- forming a second ion implantation layer over the inner surface of the second trench.
An apparatus comprising:
- a semiconductor substrate in which a first trench is formed and a second trench is formed at a middle portion of the first trench;
- a first ion implantation layer that is formed over a surface of the semiconductor substrate and over a bottom of the first trench, wherein each portion of the first ion implantation layer formed on the bottom of the first trench being spaced from each other by the second trench;
- a second gate formed from a respective bottom of each side wall of the first trench to a respective middle portion thereof;
- a respective drift region formed at each side wall of the first trench over the second trench;
- and
- a second ion implantation layer formed on an inner surface of the second trench.
Dependencies are inferred from the claim text.