Semiconductor devices including buried gate electrodes including bitline shoulder attack protection and methods of forming such semiconductor devices

A method of forming a semiconductor device, the method including:

• forming isolation trenches and buried gate trenches in a semiconductor substrate, the isolation trenches defining active regions of the semiconductor substrate;
• forming a plurality of buried gate electrodes extending below an upper surface of the active regions of the semiconductor device;
• forming a plurality of bit lines on the semiconductor substrate, the bit lines extending along a first direction;
• forming a plurality of insulating patterns on the semiconductor substrate, the insulating patterns extending along a second direction that crosses the first direction;
• and
• forming a plurality of capping patterns extending over the bit lines, wherein the insulating patterns and the capping pattern both include insulating material and at least a portion of corresponding ones the insulating patterns and the capping patterns are in direct contact with each other.

A system, comprising:

• a controller;
• and
• a memory device, the memory device including:
• a semiconductor substrate including isolations defining active regions of the semiconductor substrate;
• a plurality of buried gate electrodes extending below an upper surface of the active regions of the semiconductor device;
• a plurality of bit lines extending on the semiconductor substrate along a first direction;
• a plurality of insulating patterns extending on the semiconductor substrate along a second direction that crosses the first direction;
• and
• a plurality of capping patterns extending over the bit lines,
• wherein the insulating patterns and the capping pattern both include insulating material and at least a portion of corresponding ones of the insulating patterns and the capping patterns are in direct contact with each other,
• wherein the controller is adapted to program data in and erase data from the memory device.