Non volatile memory cells including a composite solid electrolyte layer

A method of forming a PMC comprising:

• forming a first electrode;
• forming a solid electrolyte layer that comprises high ion conductive material and low ion conductive material;
• and
• forming a second electrode, wherein the second electrode is an active electrode.

A nonvolatile memory unit comprising:

• a resistive sense memory cell (RSM), the RSM comprising:
• a first electrode;
• a solid electrolyte layer comprising clusters of high ion conductive material dispersed in a low ion conductive material;
• a second electrode;
• and
• a sink layer
• wherein the solid electrolyte layer is disposed between the first electrode and the second electrode
• at least one word line;
• and
• at least one bit line,
• wherein the word line is orthogonal to the bit line and the RSM is operatively coupled to the word line and the bit line.