Method of performing optical proximity effect corrections to photomask pattern
AssigneeFujitsu Microelectronics Limited
InventorsNorimasa Nagase, Koichi Suzuki, Masahiko Minemura
Life of this patent
Estimating the term…
Abstract
A method of performing an optical proximity effect correction to a first photomask pattern for a wiring of a semiconductor device for use in combination with a second photomask pattern for a via, the wiring including an end portion coupled to the via, the method being performed by a computer including a memory storing layout data of the first photomask pattern and the second photomask pattern, including extracting a pattern of layout data of the first photomask pattern for the wiring corresponding to the end portion of the wiring and layout data of the second photomask pattern for the via.
Claims12
A method of performing an optical proximity effect correction to a first photomask pattern for a wiring of a semiconductor device for use in combination with a second photomask pattern for a via, the wiring including an end portion coupled to the via, the method being performed by a computer including a memory storing layout data of the first photomask pattern and the second photomask pattern, comprising:
- extracting a pattern of layout data of the first photomask pattern for the wiring corresponding to the end portion of the wiring and layout data of the second photomask pattern for the via;
- analyzing the extracted pattern of the layout data of the first photomask pattern for the wiring in comparison with portion of the second photomask pattern for the via so as to distinguish a sub-portion of extracted portion of the layout data of the first photomask pattern for the wiring corresponding to a part of the end portion of the wiring to which the via is to be coupled from the rest of the extracted portion corresponding to the rest of the end portion to which no via is to be coupled;
- and
- selectively applying an optical proximity effect correction to the sub-portion of the extracted portion of the layout data of the first photomask pattern for the wiring.
A method of forming a photomask including performing an optical proximity effect corrections to a first photomask pattern for a wiring of a semiconductor device for use in combination with an second photomask pattern for a via, the wiring including an end portion coupled to the via, the method being performed by a computer including a memory storing layout data of the first photomask pattern and the second photomask pattern, comprising:
- extracting a pattern of layout data of the first photomask pattern for the wiring corresponding to the end portion of the wiring and layout data of the second photomask patterns for the via;
- analyzing the extracted pattern of the layout data of the first photomask pattern for the wiring in comparison with portion of the second photomask pattern for the via so as to distinguish a sub-portion of extracted portion of the layout data of the first photomask pattern for the wiring corresponding to a part of the end portion of the wiring to which the via is to be coupled from the rest of the extracted portion corresponding to the rest of the end portion to which no via is to be coupled;
- and
- selectively applying an optical proximity effect correction to the sub-portion of the extracted portion of the layout data of the first photomask pattern for the wiring.
A method of manufacturing a semiconductor device including performing an optical proximity effect correction to a first photomask pattern for a wiring of a semiconductor device for use in combination with a second photomask pattern for a via, the wiring including an end portion a part of which is to be coupled to the via, the method being performed by a computer including a memory storing layout data of the first photomask pattern and the second photomask pattern, comprising:
- extracting a pattern of layout data of the first photomask pattern for the wiring corresponding to the end portion of the wiring and layout data of the second photomask pattern for the via;
- analyzing the extracted pattern of the layout data of the first photomask pattern for the wiring in comparison with portion of the second photomask pattern for the via so as to distinguish a sub-portion of extracted portion of the layout data of the first photomask pattern for the wiring corresponding to a part of the end portion of the wiring to which the via is to be coupled from the rest of the extracted portion corresponding to the rest of the end portion to which no via is to be coupled;
- and
- selectively applying an optical proximity effect correction to the sub-portion of the extracted portion of the layout data of the first photomask pattern for the wiring.
Dependencies are inferred from the claim text.