US 2010/0136759 A1 · METHOD OF FABRICATING A DYNAMIC RANDOM ACCESS MEMORY

Abstract

A method of fabricating a dynamic random access memory is provided. First, a substrate at least having a memory device area and a peripheral device area is provided, wherein an isolation structure and a capacitor are formed in the substrate of the memory device area, and an isolation structure and a well are formed in the substrate of the peripheral device area. A first oxide layer is formed on the substrate of the peripheral device area, and a passing gate isolation structure is formed on the substrate of the memory device area at the same time. A second oxide layer is formed on the substrate of the memory device area. And a first transistor is formed on the substrate of the memory device area, a passing gate is formed on the passing gate isolation structure, and a second transistor is formed on the substrate of the peripheral device area.

Claims14

Dependent claims

A method of fabricating a dynamic random access memory, comprising:

providing a substrate, the substrate comprising at least a memory device area and a peripheral device area, wherein an isolation structure and a capacitor are formed in the substrate of the memory device area, and an isolation structure and a well are formed in the substrate of the peripheral device area;
forming a first oxide layer on the substrate of the peripheral device area and forming a passing gate isolation structure on the substrate of the memory device area simultaneously;
forming a second oxide layer on the substrate of the memory device area;
and
forming a first transistor on the substrate of the memory device area, forming a passing gate on the passing gate isolation structure and forming a second transistor on the substrate of the peripheral device area.

2 more elements

A method of fabricating a dynamic random access memory, comprising:

providing a substrate, the substrate comprising at least a memory device area and a peripheral device area, wherein an isolation structure and a capacitor are formed in the substrate of the memory device area, and an isolation structure and a well are formed in the substrate of the peripheral device area;
respectively forming a plurality of first oxide layers on the substrate of the peripheral device area, the respectively formed first oxide layers having different thicknesses, and respectively forming a passing gate isolation structure and a second oxide layer on the substrate of the memory device area, wherein a layer of the first oxide layers and the passing gate isolation structure are formed using a same step;
and
forming a first transistor on the substrate of the memory device area, forming a passing gate on the passing gate isolation structure and forming a second transistor on the substrate of the peripheral device area.

1 more element

Dependencies are inferred from the claim text.

Method of fabricating a dynamic random access memory

Life of this patent

Method of fabricating a dynamic random access memory

Life of this patent

Abstract

Claims14