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US 2010/0136756 A1Published application
Thin film transistor, method for fabricating the same and display device
AssigneeLG Display Co., Ltd.
InventorsGee Sung Chae, Jae Seok Heo, Woong Gi Jun
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Abstract
A method for fabricating a TFT on a substrate includes forming a gate electrode; forming a semiconductor layer insulated from the gate electrode and partially overlapped with the gate electrode; forming a gate insulating layer between the gate electrode and the semiconductor layer, the gate insulating layer including a sol-gel compound; and forming source and drain electrodes at both sides of the semiconductor layer.
Claims10
A method for fabricating a thin film transistor (TFT) on a substrate, comprising:
- forming a gate electrode;
- forming a semiconductor layer insulated from the gate electrode and partially overlapped with the gate electrode;
- forming a gate insulating layer between the gate electrode and the semiconductor layer, the gate insulating layer including a sol-gel compound;
- and
- forming source and drain electrodes at both sides of the semiconductor layer.
2 more elements
Dependencies are inferred from the claim text.