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US 2010/0136742 A1Published application
Phase change memory with ovonic threshold switch
AssigneeOvonyx, Inc.
InventorsFabio Pellizzer, Agostino Pirovano
Life of this patent
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Abstract
A phase change memory includes a memory element and a selection element. The memory element is embedded in a dielectric and includes a resistive element having at least one sublithographic dimension and a storage region in contact with the resistive element. The selection element includes a chalcogenic material embedded in a dielectric. The chalcogenic material and the storage region are part of a stack having a common etched edge.
Claims8
A method comprising:
- forming a selection element;
- and
- forming a storage region in a stack of layers extending completely in a dielectric region.
Dependencies are inferred from the claim text.