Compound and method for producing the same

Abstract

The invention provides a Ti doped lead barium zirconate dielectric material which could be applied to high frequency devices. The material comprises a compound with the chemical formula (PbI-XBaX)(ZrI-YTiY)O3, wherein X is greater than 0.3 and smaller than 1; Y is greater than zero and smaller than 0.5. The said dielectric material is tunable. A method for producing a dielectric film comprises the following steps. Firstly, prepare a Ti doped lead barium zirconate dielectric material by a first process which is one chosen from a group consisting of a solid state process, a coprecipitation process, a sol-gel process, and a hydrothermal process. Secondly, integrate the dielectric material into a target device using a second process to form a dielectric film, wherein the second process is one chosen from a group consisting of a chemical solution deposition process, a sputtering process, a chemical vapor deposition process, and a pulse laser deposition process.

Dependencies are inferred from the claim text.