Pattern creation method, semiconductor device manufacturing method, and computer-readable storage medium
OwnerKazuya FUKUHARAinventor
Life of this patent
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Abstract
A pattern creation method has extracting a first pattern and a second pattern which are different from each other from among first mask patterns created based on a first design pattern, calculating a best focus difference between the first pattern and the second pattern based on first exposure conditions, comparing the best focus difference to a predetermined threshold value, and if the best focus difference is larger than the threshold value, correcting the first design pattern to create a second design pattern.
Claims16
A pattern creation method comprising:
- extracting a first pattern and a second pattern which are different from each other from among first mask patterns created based on a first design pattern;
- calculating a best focus difference between the first pattern and the second pattern based on first exposure conditions;
- comparing the best focus difference to a predetermined threshold value;
- and
- if the best focus difference is larger than the threshold value, correcting the first design pattern to create a second design pattern.
A pattern creation method comprising:
- extracting a first pattern and a second pattern which are different from each other from among first mask patterns created based on a first design pattern;
- calculating a first best focus difference that provides a best focus difference between the first pattern and the second pattern based on first exposure conditions;
- changing the first exposure conditions to obtain second exposure conditions;
- calculating a second best focus difference that is smaller than the first best focus difference and provides a best focus difference between the first pattern and the second pattern based on the second exposure conditions;
- comparing the second best focus difference to a predetermined threshold value;
- and
- if the second best focus difference is larger than the threshold value, correcting the first design pattern to create a second design pattern.
A computer-readable storage medium storing a pattern verification program, wherein the pattern verification program causes a computer to execute the steps of:
- extracting a first pattern and a second pattern which are different from each other from among first mask patterns created based on a first design pattern;
- calculating a best focus difference between the first pattern and the second pattern based on first exposure conditions;
- and
- comparing the best focus difference to a predetermined threshold value.
Dependencies are inferred from the claim text.