Pattern formation method using levenson-type mask and method of manufacturing levenson-type mask
AssigneeRenesas Technology Corp.
InventorsMitsuru OKUNO, Akemi Moniwa
Life of this patent
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Abstract
A method of forming a pattern including a first pattern portion having a first minimum dimension and a second pattern portion having a second minimum dimension includes a first exposure step of performing exposure using a Levenson-type mask and a second exposure step of performing exposure using a half tone-type mask. When second minimum dimension is 1.3 time or more than the first minimum dimension, the exposure amount of the second exposure step is set to be equal to or smaller than the exposure amount of the first exposure step.
Claims7
A method of forming a pattern including a first pattern having a first minimum dimension which is a minimum dimension of spanning dimensions and a second pattern having a second minimum dimension which is a minimum dimension of spanning dimensions, comprising:
- a first exposure step of performing an exposure for forming said first pattern using a Levenson-type mask;
- and
- a second exposure step of performing an exposure for forming said second pattern using a half tone-type mask, wherein
- when said second minimum dimension is at least 1.3 times said first minimum dimension, an exposure amount of said second exposure step is set to be at most an exposure amount of said first exposure step.
A method of forming a pattern including a first pattern having a first minimum dimension which is a minimum dimension of spanning dimensions and a second pattern having a second minimum dimension which is a minimum dimension of spanning dimensions, comprising:
- a first exposure step of performing an exposure for forming said first pattern using a Levenson-type mask;
- and
- a second exposure step of performing an exposure for forming said second pattern using a half tone-type mask, wherein
- when said second minimum dimension is at least 1.0 time and at most 1.1 times said first minimum dimension, an exposure amount of said second exposure step is set to be greater than an exposure amount of said first exposure step.
7-11. (canceled)
Dependencies are inferred from the claim text.