Method of fabricating photomask
OwnerMi-Hye Ahn, Dongseok Naminventors
Life of this patent
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Abstract
A method of fabricating a photomask including forming a light-shielding pattern on a substrate, determining whether a critical dimension (CD) of the light-shielding pattern deviates by at least a predetermined amount from a predetermined CD range, and correcting the CD of the light-shielding pattern if the CD of the light-shielding pattern deviates by at least the predetermined amount from the predetermined CD range, wherein the correcting the CD of the light-shielding pattern includes selectively liquid-treating the light-shielding pattern having a CD deviating by at least the predetermined amount from the predetermined CD range.
Claims11
A method of fabricating a photomask, comprising:
- forming a light-shielding pattern on a substrate;
- determining whether a critical dimension (CD) of the light-shielding pattern deviates by at least a predetermined amount from a predetermined CD range;
- and
- correcting the CD of the light-shielding pattern if the CD of the light-shielding pattern deviates by at least the predetermined amount from the predetermined CD range,
- wherein the correcting the CD of the light-shielding pattern includes selectively liquid-treating the light-shielding pattern having a CD deviating by at least the predetermined amount from the predetermined CD range.
A method of fabricating a photomask, comprising:
- forming light-shielding patterns including a first light-shielding pattern and a second light-shielding pattern on a substrate;
- and
- correcting the second light-shielding patterns by supplying an etchant onto the substrate,
- wherein:
- the first light-shielding pattern satisfies a predetermined CD range and the second light-shielding pattern deviates by at least a predetermined amount from the predetermined CD range, and
- the correcting the light-shielding patterns includes removing the etchant supplied to the first light-shielding pattern and reducing a CD of the second light-shielding pattern with the etchant.
Dependencies are inferred from the claim text.