Nonvolatile memory device

A nonvolatile semiconductor memory device, comprising:

• a memory cell array comprising a plurality of memory cells for storing data;
• and
• a control circuit configured to control a reading operation of reading data from the memory cell array and a programming operation of inputting data to the memory cell array,
• wherein the control circuit comprises:
• a first unit configured to count a number of bits having logic 0 or a number of bits having logic 1, to set a logic where the counted number is greater than n/2 as an initial state to regenerate programming data, and to perform a programming operation based on the regenerated data, when simultaneously programming the programming data of n bits which are input for a designated address;
• a second unit configured to program a recognition bit for recognizing which of the logics 0 and 1 the initial state of the memory cell of the designated address is in, when the programming operation is performed;
• and
• a third unit configured to input an initial bit for determining whether data are input to the designated address.