Semiconductor device and method of manufacturing semiconductor device

Abstract

A method of manufacturing a semiconductor device which enables reduction of material costs and manufacturing costs of the semiconductor device includes forming a silicon cermet film, forming a protective film that protects the silicon cermet film, making a contact hole by plasma etching of the protective film. In this method, an etching detection layer for detecting an end point of plasma etching is formed in contact with the protective film, at least one of the protective film and the etching detection layer contains an element not common to both of the protective film and the etching detection layer, and an end point of plasma etching of the protective film is detected based on plasma emission of the element not common to the both when making the contact hole.

Dependencies are inferred from the claim text.