Semiconductor device and method for manufacturing semiconductor device

A semiconductor device, comprising:

• a plurality of semiconductor substrates that are layered;
• a through electrode penetrating through a predetermined semiconductor substrate of the semiconductor substrates and electrically connected with an external terminal of the semiconductor device;
• a circuit element provided on the predetermined semiconductor substrate;
• and
• an electrostatic discharge protection circuit also provided on the predetermined semiconductor substrate, wherein
• a wiring length between the electrostatic discharge protection circuit and the through electrode is shorter than a wiring length between the circuit element and the through electrode.

A method for manufacturing a semiconductor device,

• the semiconductor device including:
• a plurality of semiconductor substrates that are layered;
• a through electrode penetrating through a predetermined semiconductor substrate of the semiconductor substrates and electrically connected with an external terminal of the semiconductor device;
• a circuit element provided on the predetermined semiconductor substrate;
• and an electrostatic discharge protection circuit also provided on the predetermined semiconductor substrate,
• the method comprising:
• determining arrangement-wiring information such that a wiring length between the electrostatic discharge protection circuit and the through electrode is shorter than a wiring length between the circuit element and the through electrode, wherein
• the semiconductor device is manufactured based on the arrangement-wiring information.