Crack stopping structure and method for fabricating the same
AssigneeUnited Microelectronics Corp.
InventorJui-Meng Jao
Life of this patent
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Abstract
A crack stopping structure is disclosed. The crack stopping structure includes a semiconductor substrate having a die region, a die seal ring region, and a scribe line region; a metal interconnect structure disposed on the semiconductor substrate of the scribe line region; and a plurality of dielectric layers disposed on the semiconductor substrate of the die region, the die seal ring region, and the scribe line region. The dielectric layers include a first opening exposing the surface of the metal interconnect structure of the scribe line region and a second opening exposing the dielectric layer adjacent to the metal interconnect structure such that the metal interconnect structure and the exposed portion of the dielectric layer form a step.
Claims18
A crack stopping structure, comprising:
- a semiconductor substrate having a die region, a die seal ring region, and a scribe line region;
- a metal interconnect structure disposed on the semiconductor substrate of the scribe line region;
- and
- a plurality of dielectric layers disposed on the semiconductor substrate of the die region, the die seal ring region, and the scribe line region, wherein the dielectric layers comprise a first opening exposing the surface of the metal interconnect structure of the scribe line region and a second opening exposing the dielectric layer adjacent to the metal interconnect structure such that the metal interconnect structure and the exposed portion of the dielectric layer form a step.
A method for fabricating a crack stopping structure, comprising:
- providing a semiconductor substrate having a die region, a die seal ring region, and a scribe line region;
- forming a metal interconnect structure on the semiconductor substrate of the scribe line region;
- forming a dielectric layer on the metal interconnect structure;
- and
- removing a portion of the dielectric layer to expose the surface of the metal interconnect structure and removing the dielectric layer adjacent to the metal interconnect structure for forming an opening adjacent to the metal interconnect structure.
Dependencies are inferred from the claim text.