Methods for forming conductive vias in semiconductor device components

A method for forming a conductive interconnect in a substrate, comprising:

• forming at least one blind via in a first surface of a substrate;
• passivating surfaces of the at least one blind via with an oxide layer;
• forming a seed layer comprising copper over the oxide layer;
• forming conductive material on the seed layer to fill remaining space within the at least one blind via;
• and
• abrasively planarizing an opposite, second surface of the substrate to expose the conductive material filling the remainder of the at least one blind via.

A semiconductor device, comprising:

• a substrate including a first surface and an opposite second surface;
• at least one blind via formed in the first surface of the substrate;
• a passivation layer comprising an oxide over surfaces of the at least one blind via;
• a copper seed layer over the seed layer;
• and
• a conductive material contacting the seed layer.