Production of a self-aligned cusin barrier

An imager, comprising:

• a microlens;
• a photodiode;
• and
• at least one semiconductor product including a self-aligned barrier between a copper portion and a dielectric portion, the self-aligned barrier comprising:
• a first copper silicide layer comprising predominantly first copper silicide molecules and
• a second copper silicide layer between the first copper silicide layer and the copper portion comprising predominantly second copper silicide molecules, the proportion of the number of silicon atoms being higher in the second molecules than in the first molecules.

Apparatus, comprising:

• a copper portion of a semiconductor product wafer;
• a self-aligned barrier formed on a surface of the copper portion;
• wherein the self-aligned barrier comprises:
• a first copper silicide layer;
• and
• a second copper silicide layer located between the first copper silicide layer and the copper portion;
• wherein the second copper silicide layer has a higher proportion of silicon atoms than the first copper silicide layer.

Apparatus, comprising:

• a copper portion;
• a dielectric portion;
• and
• a barrier structure located between the copper portion and the dielectric portion, the barrier structure comprising:
• a first copper silicide layer comprising predominately first copper silicide molecules;
• and
• a second copper silicide layer comprising predominately second copper silicide molecules;
• wherein a proportion of a number of silicon atoms in the second copper silicide molecules is higher than a proportion of a number of silicon atoms in the first copper silicide molecules.