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US 2010/0133619 A1Published application
Semiconductor device having a fin transistor and method for fabricating the same
AssigneeHynix Semiconductor Inc.
InventorsSe-Aug JANG, Heung-Jae CHO, Kwan-Yong LIM, Tae-Yoon KIM
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Abstract
A fin transistor includes fin active region, an isolation layer covering both sidewalls of a lower portion of the fin active region, a gate insulation layer disposed over a surface of the fin active region, and a gate electrode disposed over the gate insulation layer and the isolation layer, and having a work function ranging from approximately 4.4 eV to approximately 4.8 eV.
Claims16
A fin transistor, comprising:
- a fin active region;
- an isolation layer covering both sidewalls of a lower portion of the fin active region;
- a gate insulation layer disposed over a surface of the fin active region;
- and
- a gate electrode disposed over the gate insulation layer and the isolation layer, and having a work function ranging from approximately 4.4 eV to approximately 4.8 eV.
2 more elements
A semiconductor device, comprising:
- a substrate including first, second and third regions having respective active regions which are separated from one another by an isolation layer, wherein an active region of the first region being provided as a fin active region;
- a gate insulation layer formed over the active regions of the first through third regions;
- and
- first, second and third gate electrodes disposed over the substrate of the first through third regions respectively,
- wherein a fin transistor is provided in the first region, and work functions of the first through third gate electrodes are different from one another, the first gate electrode having the work function between those of the second and third gate electrodes.
2 more elements
16-30. (canceled)
Dependencies are inferred from the claim text.