Method for fabricating a semiconductor device
AssigneeNanya Technology Corporation
InventorsJar-Ming Ho, Mao-Ying Wang
Life of this patent
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Abstract
An embodiment of the invention provides a method for forming a semiconductor device comprising providing a substrate with a pad layer formed thereon. The pad layer and the substrate are patterned to form a plurality of trenches. A trench top insulating layer is formed in each trench. Wherein the trench top insulating layer protrudes from the substrate and has an extension portion extending to the pad layer. The pad layer and the substrate are etched by using the trench top insulating layers and the extension portions as a mask to form a recess in the substrate. And a recess gate is formed in the recess.
Claims7
1-14. (canceled)
A semiconductor device structure, comprising:
- a substrate having a plurality of trenches therein;
- a trench top insulating layer in each trench and protruding from the substrate, wherein the trench top insulating layer comprises an extension portion wider than the trench;
- spacers disposed on sidewalls of the trench top insulating layers and underlying the extension portions;
- a recess within the substrate between the spacers of neighboring trenches;
- and
- a recess gate in the recess.
Dependencies are inferred from the claim text.