Nitride semiconductor light emitting device

Abstract

A nitride semiconductor light emitting device includes: a multilayer structure a plurality of nitride semiconductor layers including a light emitting layer where the multilayer structure has cavity facets facing each other; and a plurality of protective films made of dielectric materials on at least one of the cavity facets. Among the plurality of protective films, a first protective film in contact with the cavity facet is made of a material containing no oxygen. A second protective film on a surface of the first protective film opposite to the cavity facet is made of a material containing aluminum lower in crystallization temperature than the first protective film. A third protective film on a surface of the second protective film opposite to the first protective film has an exposed surface and made of a material higher in crystallization temperature than the second protective film.

Dependencies are inferred from the claim text.