Thin-film transistor and method of manufacturing the same
AssigneeSamsung Electronics Co., Ltd.
InventorsHoon KANG, Yun-Seok Lee, Jae-Sung Kim, Yang-Ho Jung, Young-Je Cho, Cheon-Jae Maeng, Woo-Geun Lee
Life of this patent
Estimating the term…
Loading patent…
AssigneeSamsung Electronics Co., Ltd.
InventorsHoon KANG, Yun-Seok Lee, Jae-Sung Kim, Yang-Ho Jung, Young-Je Cho, Cheon-Jae Maeng, Woo-Geun Lee
Estimating the term…
Provided is a thin-film transistor (TFT) substrate. The TFT substrate includes: an insulating substrate; a semiconductor pattern which is formed on the insulating substrate, the semiconductor pattern having a top surface and a bottom surface; a source electrode and a drain electrode which are disposed on the top and bottom surfaces of the semiconductor pattern, respectively; a gate electrode which is disposed alongside the semiconductor pattern with a gate insulating film interposed therebetween; a data line which is connected to the source electrode and extends in a first direction; a gate line which is connected to the gate electrode and extends in a second direction; and a pixel electrode which is connected to the drain electrode and is formed in a pixel region.
A thin-film transistor (TFT) substrate comprising:
A method of manufacturing a TFT substrate, the method comprising:
Dependencies are inferred from the claim text.