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US 2010/0133233 A1Published application
Dry etching method
OwnerYasuhiro Morikawa, Koukou Suu +2inventors
InventorsYasuhiro Morikawa, Koukou Suu, Toshio Hayashi, Tadayuki Satou
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Abstract
A dry etching method by which a substrate can be dry-etched on both sides without a crack is provided. The dry etching method includes: introducing an etching gas having a fluorocarbon gas and a rare gas into a vacuum chamber; generating plasma in the vacuum chamber having a predetermined pressure; and etching a substrate to be processed adhered on an adhesive surface of a heat-conductive sheet disposed on a substrate table.
Claims16
A dry etching method comprising:
- introducing an etching gas including a fluorocarbon gas and a rare gas into a vacuum chamber;
- generating plasma in the vacuum chamber having a predetermined pressure;
- and
- etching a substrate adhered on an adhesive surface of a heat-conductive sheet disposed on a substrate table.
1 more element
A dry etching method comprising:
- introducing an etching gas including a fluorocarbon gas and a rare gas into a vacuum chamber;
- generating plasma in the vacuum chamber having a predetermined pressure;
- etching one side of a substrate adhered on an adhesive surface of a heat-conductive sheet disposed on a substrate table;
- detaching the substrate from the heat-conductive sheet and reversing the substrate;
- adhering the one side on the adhesive surface of the heat-conductive sheet;
- and
- etching the other side of the substrate under substantially same conditions as conditions for the one side.
4 more elements
A dry etching method comprising:
- fixing a heat-conductive sheet on a base;
- adhering a quartz substrate on an adhesive surface of the heat-conductive sheet;
- placing the base on a substrate table in a vacuum chamber;
- introducing an etching gas including a fluorocarbon gas and a rare gas into the vacuum chamber;
- forming a magnetic neutral line while maintaining the internal pressure of the vacuum chamber at 1 Pa or less;
- applying an electric field to generate plasma in the vacuum chamber;
- etching one side of the quartz substrate;
- detaching the quartz substrate from the heat-conductive sheet and reversing the substrate;
- adhering the one side of the quartz substrate on the adhesive surface of the heat-conductive sheet;
- and
- etching the other side of the quartz substrate under substantially same conditions as conditions for the one side.
8 more elements
Dependencies are inferred from the claim text.