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US 2010/0133089 A1Published application
Magnetron sputtering apparatus and method for manufacturing thin film
Assigneec/o CANON ANELVA CORPORATION
InventorSeishi Horiguchi
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Abstract
In the present invention, in forming a LaB6 thin film by magnetron sputtering, the single-crystal properties in the wide domain direction in the obtained LaB6 thin film are improved. In one embodiment of the present invention, in a magnetron sputtering apparatus, parallel magnetic field strength on a surface of the substrate is set to 0.1 times or less parallel magnetic field strength on a surface of the target.
Claims12
A magnetron sputtering apparatus comprising:
- a substrate holder that can hold a substrate;
- and
- a magnetron cathode having a cathode on which a target can be mounted, and a magnetic field generating apparatus,
- wherein parallel magnetic field strength (in gauss) on a surface of the substrate is set to 0.1 times or less parallel magnetic field strength (in gauss) on a surface of the target.
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A method for manufacturing a thin film, comprising the steps of:
- preparing a substrate;
- and
- depositing a thin film of a lanthanide compound containing at least one element selected from light elements and at least one element selected from lanthanide elements on the substrate by a magnetron sputtering method using a target of the lanthanide compound,
- wherein parallel magnetic field strength (in gauss) on a surface of the substrate is set to 0.1 times or less parallel magnetic field strength (in gauss) on a surface of the target.
1 more element
Dependencies are inferred from the claim text.