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US 2010/0132778 A1Published application
Solar cell, method of fabricating the same and apparatus for fabricating the same
AssigneeJusung Engineering Co., Ltd.
InventorsJin Hong, Chang-Sil Yang
Life of this patent
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Abstract
A method of fabricating a solar cell includes forming a first electrode on a transparent substrate; forming a first impurity-doped semiconductor layer on the first electrode; forming a light absorption layer on the first impurity-doped semiconductor layer and including a plurality of sub-layers, the plurality of sub-layers having stepwisely varying energy band gaps; forming a second impurity-doped semiconductor layer on the light absorption layer; and forming a second electrode on the second impurity-doped semiconductor layer.
Claims33
A method of fabricating a solar cell, comprising:
- forming a first electrode on a transparent substrate;
- forming a first impurity-doped semiconductor layer on the first electrode;
- forming a light absorption layer on the first impurity-doped semiconductor layer and including a plurality of sub-layers, the plurality of sub-layers having stepwisely varying energy band gaps;
- forming a second impurity-doped semiconductor layer on the light absorption layer;
- and
- forming a second electrode on the second impurity-doped semiconductor layer.
3 more elements
A solar cell, comprising:
- a transparent substrate;
- a first electrode on the transparent substrate;
- a first impurity-doped semiconductor layer on the first electrode;
- a light absorption layer on the first impurity-doped semiconductor layer and including a plurality of sub-layers, the plurality of sub-layers having stepwisely varying energy band gaps;
- a second impurity-doped semiconductor layer on the light absorption layer;
- and
- a second electrode on the second impurity-doped semiconductor layer.
4 more elements
An apparatus for fabricating a solar cell, comprising:
- a transfer chamber including a transfer means for transferring a substrate;
- a load lock chamber coupled with a first side portion of the transfer chamber, the load lock chamber alternately having a vacuum state and an atmospheric pressure state for inputting and outputting the substrate;
- a first process chamber coupled with a second side portion of the transfer chamber, a first impurity-doped semiconductor layer formed on a first electrode on the substrate in the first process chamber;
- and
- a second process chamber coupled with a third side portion of the transfer chamber, a light absorption layer formed on the first impurity-doped semiconductor layer in the second process chamber, wherein a ratio of a hydrogen gas to a silicon source material is stepwisely varied such that the light absorption layer including a plurality of sub-layers having stepwisely varying energy band gaps.
2 more elements
An apparatus for fabricating a solar cell, comprising:
- a transfer chamber including a transfer means for transferring a substrate;
- a load lock chamber coupled with a first side portion of the transfer chamber, the load lock chamber alternately having a vacuum state and an atmospheric pressure state for inputting and outputting the substrate;
- a first process chamber coupled with a second side portion of the transfer chamber, a first impurity-doped semiconductor layer formed on a first electrode on the substrate in the first process chamber;
- and
- a second process chamber coupled with a third side portion of the transfer chamber, a light absorption layer formed on the first impurity-doped semiconductor layer in the second process chamber, wherein a power to the second process chamber is stepwisely varied with a fixed ratio of a hydrogen gas to a silicon source material such that the light absorption layer including a plurality of sub-layers having stepwisely varying energy band gaps.
2 more elements
An apparatus for fabricating a solar, comprising:
- a loading chamber alternately having a vacuum state and an atmospheric pressure state for inputting a substrate;
- a first process chamber coupled with a side portion of the loading chamber a first impurity-doped semiconductor layer formed on a first electrode on the substrate in the first process chamber;
- a second process chamber coupled with a side portion of the first process chamber, a light absorption layer formed on the first impurity-doped semiconductor layer in the second process chamber, wherein a ratio of a hydrogen gas to a silicon source material is stepwisely varied such that the light absorption layer including a plurality of sub-layers having stepwisely varying energy band gaps;
- and
- an unloading chamber coupled with a side portion of the second process chamber, the unloading chamber alternately having a vacuum state and an atmospheric pressure state for outputting the substrate.
2 more elements
An apparatus for fabricating a solar, comprising:
- a loading chamber alternately having a vacuum state and an atmospheric pressure state for inputting a substrate;
- a first process chamber coupled with a side portion of the loading chamber a first impurity-doped semiconductor layer formed on a first electrode on the substrate in the first process chamber;
- a second process chamber coupled with a side portion of the first process chamber, a light absorption layer formed on the first impurity-doped semiconductor layer in the second process chamber, wherein a power to the second process chamber is stepwisely varied with a fixed ratio of a silicon source material to a hydrogen gas such that the light absorption layer including a plurality of sub-layers having stepwisely varying energy band gaps;
- and
- an unloading chamber coupled with a side portion of the second process chamber, the unloading chamber alternately having a vacuum state and an atmospheric pressure state for outputting the substrate.
2 more elements
Dependencies are inferred from the claim text.