Backside contacting on thin layer photovoltaic cells

A method of backside contacting ultra thin layer photovoltaic cells having Si elements, comprising:

• providing a p-n-junction consisting of a thin n-doped Si layer and a structured thin p-doped Si layer bonded on top of said n-doped Si layer;
• bonding said p-n-junction to a glass substrate;
• preparing contact points on said structured thin p-doped Si layer and said thin n-doped Si layer;
• and
• creating contact pins on said structured thin p-doped Si layer and said thin n-doped Si layer.

A method of backside contacting ultra thin layer photovoltaic cells having thin film elements, comprising:

• bonding a thin film on a glass substrate creating an active side of said substrate;
• creating contact pads on a back-side of said glass substrate;
• and
• electrically connecting said thin film and said back-side.