Barrier slurry for low-k dielectrics
AssigneeCabot Microelectronics Corporation
InventorsShoutian Li, Steven Grumbine, Jeffrey Dysard, Pankaj Singh
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Abstract
The invention provides a chemical-mechanical polishing composition for polishing a substrate. The polishing composition comprises silica, a compound selected from the group consisting of an amine-substituted silane, a tetraalkylammonium salt, a tetraalkylphosphonium salt, and an imidazolium salt, a carboxylic acid having seven or more carbon atoms, an oxidizing agent that oxidizes a metal, and water. The invention further provides a method of chemically-mechanically polishing a substrate with the aforementioned polishing composition.
Claims46
A chemical-mechanical polishing composition comprising:
- (a) silica,
- (b) a cationic compound selected from the group consisting of an amine-substituted silane, a tetraalkylammonium salt, a tetraalkylphosphonium salt, a pyridinium salt, and an imidazolium salt,
- (c) a carboxylic acid having seven or more carbon atoms,
- (d) an oxidizing agent that oxidizes a metal, and
- (e) water.
A method of chemically-mechanically polishing a substrate, which method comprises:
- (i) contacting a substrate with a chemical-mechanical polishing composition comprising:
- (a) silica,
- (b) a compound selected from the group consisting of an amine-substituted silane, a tetraalkylammonium salt, a tetraalkylphosphonium salt, and an imidazolium salt,
- (c) a carboxylic acid having seven or more carbon atoms,
- (d) an oxidizing agent that oxidizes at least a portion of a substrate, and
- (e) water,
- (ii) moving the polishing composition relative to the substrate with the chemical-mechanical polishing composition therebetween, and
- (iii) abrading at least a portion of the substrate to polish the substrate.
Dependencies are inferred from the claim text.