Method for producing semiconductor device and semiconductor producing apparatus

A method for producing a semiconductor device, in which a plasma of a gas containing an impurity is produced through a discharge in a vacuum chamber, and an impurity region is formed in a surface of a substrate by exposing the substrate to the plasma, the method comprising:

• a step (a) of setting a first plasma doping condition being a reference condition;
• a step (b) of correcting the first plasma doping condition to set a second plasma doping condition so that a dose of the impurity to be introduced into the substrate becomes equal to a target value, based on an accumulated discharge time until the substrate is placed in the vacuum chamber;
• and
• a step (c) of plasma-doping the substrate with the impurity under the second plasma doping condition set in the step (b) to form the impurity region.

A semiconductor producing apparatus for forming an impurity region in a surface of a substrate by exposing the substrate to a plasma of a gas containing an impurity, the semiconductor producing apparatus comprising:

• a vacuum chamber;
• a gas supplying section for supplying the gas into the vacuum chamber;
• an exhausting section for exhausting the vacuum chamber;
• a plasma generating section for making the gas supplied into the vacuum chamber by the gas supplying section into a plasma through a discharge;
• and
• a plasma doping condition control section for controlling a plasma doping condition,
• wherein the plasma doping condition control section sets a first plasma doping condition being a reference condition, and corrects the first plasma doping condition to set a second plasma doping condition so that a dose of the impurity to be introduced into the substrate becomes equal to a target value, based on an accumulated discharge time until the substrate is placed in the vacuum chamber.