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US 2010/0075150 A1Published application
Method of forming a gas barrier layer, a gas barrier layer formed by the method, and a gas barrier film
AssigneeFUJIFILM Corporation
InventorToshiya TAKAHASHI
Life of this patent
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Abstract
A method of forming a gas barrier layer comprises: forming a first layer over a substrate by plasma-enhanced CVD at a first pressure, at least a part of a surface of the substrate being made of an organic material; and forming a second layer on the first layer by plasma-enhanced CVD at a second pressure which is lower than the first pressure.
Claims9
A method of forming a gas barrier layer comprising:
- forming a first layer over a substrate by plasma-enhanced CVD at a first pressure, at least a part of a surface of the substrate being made of an organic material;
- and
- forming a second layer on the first layer by plasma-enhanced CVD at a second pressure which is lower than the first pressure.
Dependencies are inferred from the claim text.