Relief layer and imprint method for making the same
AssigneeKoninklijke Phillips Electronics N.V.
InventorMarcus Antonius Verschuuren
Life of this patent
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Abstract
The invention relates to a method for forming a relief layer (216) employing a stamp (206) having a stamping surface (208) including a template relief pattern. A solution comprising a siliconoxide compound (200) is sandwiched between a substrate surface (202) and the stamp surface (208) and dried while sandwiched. After removal of the template relief pattern the relief layer obtained has a high inorganic mass content making it robust and directly usable for a number of applications such as semiconductor, optical or micromechanical.
Claims22
Method for forming a relief layer (216) employing a stamp (206) having a stamping surface (208) including a template relief pattern, the method comprising the steps of:
- providing a substrate surface (202);
- providing at least one of the substrate surface (202) and the stamping surface with a siliconoxide compound solution comprising a siliconoxide compound and a solvent;
- removing the solvent at least partly to leave a partially dried siliconoxide compound layer (200);
- sandwiching the partially dried siliconoxide compound layer (200) in between the substrate surface (2020) and the stamping surface (208), the partially dried siliconoxide compound layer (200) thereby being molded according to the template relief pattern;
- further drying the partially dried siliconoxide compound layer while being sandwiched, thereby forming a solidified siliconoxide layer (216);
- separating the stamping surface from the solidified siliconoxide layer thereby providing the relief layer (216);
- the siliconoxide compound solution comprising a siliconoxide compound for forming the siliconoxide relief layer, the silicon atoms of the siliconoxide compound being either silicon atoms chemically bound to four oxygen atoms or silicon atoms being chemically bound to three oxygen atoms and one atom different from oxygen, the chemical bond between the silicon atoms and the one atom different from oxygen being chemically inert during the method.
Relief layer comprising siliconoxide, characterized in that the relief layer comprises silicon atoms chemically bound to four oxygen atoms and silicon atoms chemically bound to three oxygen atoms and one carbon atom.
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Dependencies are inferred from the claim text.