Data writing method for magnetoresistive effect element and magnetic memory

A magnetic memory comprising:

• a plurality of memory cells each including a magnetoresistive effect element which comprises a first magnetic layer having an invariable magnetizing direction, a second magnetic layer having a variable magnetizing direction, and a tunnel barrier layer provided between the first magnetic layer and the second magnetic layer;
• and
• a write circuit which includes a write current generation circuit that generates a write current to change the magnetizing direction of the second magnetic layer, and which flows the write current through the magnetoresistive effect element bidirectionally,
• wherein the write circuit flows the write current in which a falling period from the start of a falling edge to the end of the falling edge is longer than a rising period from the start of a rising edge to the end of the rising edge.