Low cost die placement

A method for assembling integrated circuits comprising:

• forming one or more spaced IC elements on an oxide layer, the oxide layer formed on a silicon substrate;
• coupling an intermediate transfer member onto a first surface of the one or more spaced IC elements;
• removing the silicon substrate by etching away the oxide layer and exposing a second surface of the one or more spaced IC elements, wherein the second surface is substantially parallel to the first surface;
• coupling a phase change surface of a release member onto the exposed second surface of the one or more spaced IC elements;
• removing the intermediate transfer member from the first surface of the one or more spaced IC elements;
• and
• exposing the coupled phase change material to an energy for selectively releasing the one or more spaced IC elements from the release member.

A method for assembling integrated circuits comprising:

• forming a silicon layer on a phase change material of a release member;
• forming a plurality of bump bonds on the silicon layer of the release member;
• forming one or more spaced dies on the phase change material by etching through the silicon layer, wherein each spaced die comprises one or more bump bonds formed on an etched silicon layer;
• and
• exposing the phase change material to an energy to induce a phase change for selectively releasing the one or more spaced dies from the release member.

A method for controlling an assembly of IC elements comprising:

• coupling one or more IC elements onto a phase change material of a release member;
• selectively inspecting a group of the one or more IC elements on the phase change material;
• and
• selectively applying an energy to a portion of the phase change material to release an inspected IC element for repair.

An integrated circuit sub-assembly comprising:

• a release member supporting one or more transferred IC elements;
• an activatable thermal barrier layer formed on the release member, wherein the activatable thermal barrier material is provided between the one or more IC elements and the release member;
• and
• an energy source directed at said activatable thermal barrier layer, wherein said energy source activates said activatable thermal barrier layer and releases each transferred IC element from the release member.