Semiconductor Device and Manufacturing Method of the Same
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsYoshiaki Oikawa, Shingo Eguchi
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AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsYoshiaki Oikawa, Shingo Eguchi
Estimating the term…
With the use of a conductive shield formed on the top or bottom side of a semiconductor integrated circuit, an electrostatic breakdown (malfunctions of the circuit or damages of a semiconductor element) of the semiconductor integrated circuit due to electrostatic discharge is prevented, and sufficient communication capability is obtained. With the use of a pair of insulators which sandwiches the semiconductor integrated circuit, a highly reliable semiconductor device that is reduced in thickness and size and has resistance to an external stress can be provided. A semiconductor device can be manufactured with high yield while defects of shapes and characteristics due to an external stress or electrostatic discharge are prevented in the manufacturing process.
A semiconductor device comprising:
A semiconductor device comprising:
A semiconductor device comprising:
Dependencies are inferred from the claim text.